US12571128USUSPTO Grant XML

Chemical vapor deposition growth of hexagonal boron nitride films and nanostructures

A scalable method of synthesizing hexagonal boron nitride (hBN) films and nanotubes by chemical vapor deposition (CVD) is provided. The method includes atmospheric pressure CVD of hBN on metallic growth substrates using solid boron sources and molecular nitrogen. The solid boron source can be in the form of powder, fragments, or platelets and placed upstream, on top, or below the growth substrate. The growth substrate can include Fe, Ni, Cr, Cu, and their alloys including various steels. The growth atmosphere includes nitrogen compounds, inert gases and hydrogen. The reaction can occur within a reaction vessel heated to 800 C.-1200 C. in less than 120 minutes with sequential cooling at a controlled rate. In laboratory testing, the hBN film exhibited improved protection against harsh corrosion over long periods and resistance to high-temperature oxidation in air.

Patent

Brief

Patent brief

Problem

How can heat, airflow, and thermal load be managed more effectively in compact systems?

Novelty

The method includes atmospheric pressure CVD of hBN on metallic growth substrates using solid boron sources and molecula...

Uses

Patent review

Assignee

UT-BATTELLE, LLC

Published

Mar 10, 2026

Inventors

Ilia N. Ivanov, Ivan V. Vlassiouk, Dayrl P. Briggs

Domain

Thermal systems

Plain-English summary

Problem

How can heat, airflow, and thermal load be managed more effectively in compact systems?

Solution

scalable method of synthesizing hexagonal boron nitride (hBN) films and nanotubes by chemical vapor deposition (CVD) is provided.

Key novelty

The method includes atmospheric pressure CVD of hBN on metallic growth substrates using solid boron sources and molecular nitrogen.

Applications

Patent review

Relevant search intents

b32a44803d5a

Claims preview

1. A method of synthesizing hexagonal boron nitride, the method comprising: positioning a solid boron-containing precursor and a continuous growth substrate within a chemical vapor deposition chamber, wherein the solid boron-containing precursor includes boron powders, boron fragments, or boron platelets and does not directly contact the continuous growth substrate, wherein the continuous growth substrate includes nickel, iron, copper, chromium, or alloys thereof, and wherein the continuous growth substrate is unwound from a supply reel; heating an interior of the chemical vapor deposition chamber to between 800 C. and 1200 C., inclusive; flowing a nitrogen-containing reaction gas mixture into the chemical vapor deposition chamber, the reaction gas mixture including a nitrogen compound and hydrogen gas, wherein the reaction gas mixture is pressurized between 10 mTorr and 800 Torr, inclusive, wherein the reaction gas mixture includes a ratio of a partial pressure of nitrogen to a partial pressure of hydrogen of greater than 30, and wherein the continuous growth substrate reacts with boron released from the solid boron-containing precursor and the nitrogen compound to form a single-layer or multi-layer hexagonal boron nitride film on the continuous growth substrate; and taking up the continuous growth substrate onto a take-up reel after formation of the hexagonal boron nitride film on the continuous growth substrate. 2. The method of claim 1 , wherein the nitrogen compound comprises molecular nitrogen (N 2 ). 3. The method of claim 1 , wherein the nitrogen compound comprises ammonia (NH 3 ).

Chemical vapor deposition growth of hexagonal boron nitride films and nanostructures

Plain-English summary

Related patents