NAND die with RDL for altered bond wire bandwidth in memory devices

A storage device includes a substrate of a memory package and a first memory die. The substrate includes a controller and a first pin pad, the first pin pad being electrically connected to the controller and defining a data channel for data communications. The first memory die includes a front pin pad electrically connected to the first pin pad of the substrate by way of a first bond wire, a rear pin pad, a redistribution layer electrically connecting the front pin pad and the rear pin pad of the first memory die, and a plurality of memory cells configured to provide non-volatile storage accessible by way of the data channel.